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Automotive High Voltage Sic Mosfet DS-SPS75MA12E4S-S03130002 V1.0. OEM

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Automotive High Voltage Sic Mosfet DS-SPS75MA12E4S-S03130002 V1.0. OEM

Model Number : SPS75MA12E4S

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Solid Power-DS-SPS75MA12E4S-S03130002 V1.0.

1200V 75mΩ SiC MOSFET

Automotive High Voltage Sic Mosfet DS-SPS75MA12E4S-S03130002 V1.0. OEM

Features:

□ High blocking voltage with low On-resistance

□ High speed switching with low capacitances

□ Fast intrinsic diode with low reverse recovery (Qrr)

Typical Applications:

□ PV Inverters

□ Charging Piles

□ Energy storage systems

□ Industrial power supply

□ Industrial Motors

Maximum Ratings @Tc=25°C (unless otherwise specified)

Item	Symbol	Conditions	Values	Unit
Drain-Source Voltage	VDSmax	VGS=0V, ID=100μA	1200	V
Gate-Source Voltage	VGSop	Static	-5/+20	V
Maximum Gate-Source Voltage	VGSmax	Static	-8/+22	V
Continuous Drain Current	ID	VGS=20V, Tc=25°C	47	A
Continuous Drain Current	ID	VGS=20V, Tc=100°C	33
Pulsed Drain Current	ID(pulse)	Pulse width tp limited by Tjmax	70	A
Power Dissipation	PD	TC=25.C, Tj=175°C	288	W
Operating Junction Range	Tj		-55 to +175	°C
Storage Temperature Range	Tstg		-55 to +175	°C

Electrical Characteristics @Tc=25°C (unless otherwise specified)

Item	Symbol	Conditions	Values min. typ. max.			Unit
Drain-Source Breakdown Voltage	V(BR)DSS	VGS=0V, ID=100μA	1200	-	-	V
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=5mA	2.0	2.8	3.5	V
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=5mA, Tj=175.C	-	1.9	-	V
Zero Gate Voltage Drain Current	IDSS	VDS=1200V, VGS=0V	-	1	100	μA
Gate-Source Leakage Current	IGSS	VGS=20V, VDS=0V	-	10	100	nA
Drain-Source On-State Resistance	RDS(on)	VGS=20V, ID=20A	-	75	90	mΩ
		VGS=20V, ID=20A, Tj=175.C	-	133	-
		VGS=18V, ID=20A	-	82	120
		VGS=18V, ID=20A, Tj=175.C	-	137	-
Transconductance	gfs	VDS=20V, IDS=20A	-	10	-	S
Transconductance	gfs	VDS=20V, IDS=20A, Tj=175.C	-	11	-	S
Turn-On Switching Energy (Body Diode FWD)	Eon	VDS=800V,VGS=-5V/20V, ID=20A, RG(ext)=2.5Ω, L=200μH, Tj=25.C FWD=SPS75MA12E4S	-	343	-	μJ
Turn-Off Switching Energy (Body Diode FWD)	Eoff		-	97	-	μJ
Turn-On Delay Time	td(on)	VDD=800V, VGS=-5V/20V, ID=20A,RG(ext)=2.5Ω, L=200μH	-	6	-	ns
Rise Time	tr		-	22	-
Turn-Off Delay Time	td(off)		-	20	-
Fall Time	tf		-	10	-
Gate to Source Charge	Qgs	VDS=800V, VGS=-5V/20V, ID=20A	-	35	-	nC
Gate to Drain Charge	Qgd		-	35	-
Gate to Drain Charge	Qgd		-	25	-
Total Gate Charge	Qg		-	87	-
Input Capacitance	Ciss	VGS=0V, VDS=1000V f=1MHz,VAC=25mV	-	1450	-	pF
Output Capacitance	Coss		-	66	-
Reverse Transfer Capacitance	Crss		-	13	-
COSS Stored Energy	Eoss		-	40	-	μJ
Internal Gate Resistance	RG(int)	f=1MHz, VAC=25mV	-	2.4	-	Ω

Reverse Diode Characteristics @Tc=25°C (unless otherwise specified)

Item	Symbol	Conditions	min.	Values typ.	max.	Unit
Diode Forward Voltage	VSD	VGS=-5V, ISD=10A	-	4.9	7	V
Diode Forward Voltage	VSD	VGS=-5V, ISD=10A, Tj=175.C	-	4.0	-	V
Continuous Diode Forward Current	IS	VGS=-5V	-	46	-	A
Reverse Recovery Time	trr	VGS=-5V,	-	22	-	ns
Reverse Recovery Charge	Qrr	ISD=20A,	-	397	-	nC
Peak Reverse Recovery Current	Irrm	VR=800V, di/dt=3000A/μs	-	29	-	A

Reverse Diode Characteristics @Tc=25°C (unless otherwise specified)

Item Symbol		Conditions	Values Unit
Thermal Resistance from Junction to Case	RθJC		-	0.5	-	℃/W

Typical Performance

Typical Performance

Automotive High Voltage Sic Mosfet DS-SPS75MA12E4S-S03130002 V1.0. OEM

Typical Performance

This is a Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a voltage rating of 1200V and an on-state resistance (RDS(on)) of 75 milliohms (75mΩ). SiC MOSFETs are known for their high voltage capability and low on-state resistance, making them suitable for efficient power electronic applications such as high-frequency converters and electric vehicles. The 75mΩ on-state resistance indicates relatively low power losses during conduction, contributing to improved efficiency in high-power applications.

Package Outline: TO-247-4L

Automotive High Voltage Sic Mosfet DS-SPS75MA12E4S-S03130002 V1.0. OEM

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