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1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

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1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

Model Number : SPS200F12K3

Collector Current : 50A

Collector-Emitter Voltage : 600V

Current Rating : 50A

Gate Charge : 50nC

Gate-Emitter Voltage : ±20V

Isolation Voltage : 2500V

Maximum Operating Temperature : 150°C

Package Type : EconoPack

Reverse Recovery Time : 100ns

Rohs Compliant : Yes

Short Circuit Withstand Time : 10μs

Switching Frequency : 20kHz

Thermal Resistance : 1.5°C/W

Voltage Rating : 600V

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Solid Power-DS-SPS200F12K3-S04030013 V1.0

1200V 200A IGBT Full Bridge Module

1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

Features:

□ 1200V Trench+ Field Stop technology

□ Freewheeling diodes with fast and soft reverse recovery

□ V_CE(sat) with positive temperature coefficient

□ Low switching losses

□ Short circuit ruggedness

Typical Applications:

□ Motor Drives

□ Servo Drives

□ Auxiliary inverters

Package

Item	Symbol	Conditions		Values			Unit
Isolation test voltage	VISOL	RMS, f = 50 Hz, t =1 min		2.5			kV
Material of module baseplate				Cu
Internal isolation		(class 1, IEC 61140) Basic insulation (class 1, IEC 61140)		Al₂O₃
Creepage distance	dCreep	terminal to heatsink		10.0			mm
Clearance	dClear	terminal to heatsink		7.5			mm
Comparative tracking index	CTI			＞200

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Stray inductance module	LsCE				21		nH
Module lead resistance, terminals - chip	RCC’+EE’		T_C=25℃		1.80		mΩ
Storage temperature	Tstg			-40		125	℃
Mounting torque for module mounting	M5			3		6	Nm
Weight	G				300		g

IGBT

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Collector-emitter Voltage	VCES		T_vj=25℃	1200	V
Maximum gate-emitter voltage	VGES			±20	V
Transient gate-emitter voltage	VGES	t_p≤10μs,D=0.01		±30	V
Continuous DC collector current	I_C		T_C=60℃	200	A
Pulsed collector current,tp limited by T_jmax	ICpulse			400	A
Power dissipation	Ptot			750	W

Characteristic Values

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	VCE(sat)	I_C=200A, V_GE=15V	T_vj=25℃		1.60	2.10	V
			T_vj=125℃		1.80
			T_vj=150℃		1.85
Gate threshold voltage	VGE(th)	V_CE=V_GE, I_C=8mA		5.2	6.0	6.7	V
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=25℃			100	µA
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=150℃			5	mA
Gate-emitter leakage current	IGES	V_CE=0V,V_GE=±20V, T_vj=25℃		-200		200	nA
Gate Charge	Q_G	V_CE=600V, I_C=200A , V_GE=±15V			1.6		μC
Input Capacitance	Cies	V_CE=25V, V_GE=0V, f =100kHz			24.7		nF
Output Capacitance	Coes				0.9
Reverse Transfer Capacitance	Cres				0.2
Turn-on delay time,inductive load	td(on)	V_CC=600V,I_C=200A R_G=3.3Ω, V_GE=15V	T_vj=25℃		388		ns
			T_vj=125℃		428		ns
			T_vj=150℃		436		ns
Rise Time,inductive load	t_r		T_vj=25℃		44		ns
			T_vj=125℃		52		ns
			T_vj=150℃		56		ns
Turn-off delay time,inductive load	td(off)	V_CC=600V,I_C=200A R_G=3.3Ω, V_GE=15V	T_vj=25℃		484		ns
			T_vj=125℃		572		ns
			T_vj=150℃		588		ns
Fall time,inductive load	t_f		T_vj=25℃		132		ns
			T_vj=125℃		180		ns
			T_vj=150℃		196		ns
Turn-on energy loss per pulse	Eon	V_CC=600V,I_C=200A R_G=3.3Ω, V_GE=15V	T_vj=25℃		6.5		mJ
			T_vj=125℃		9.6		mJ
			T_vj=150℃		11.2		mJ
Turn off Energy loss per pulse	Eoff		T_vj=25℃		11.8		mJ
			T_vj=125℃		16.4		mJ
			T_vj=150℃		17.3		mJ
SC data	ISC	V_GE≤15V, V_CC=800V	tp≤10µs T_vj=150℃			750	A
IGBT thermal resistance,junction-case	RthJC					0.20	K /W
Operating Temperature	TJop			-40		150	℃

Diode

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Repetitive reverse voltage	VRRM		T_vj=25℃	1200	V
Continuous DC forward current	I_F			200	A
Diode pulsed current,tp limited by T_Jmax	IFpulse			400	A

Characteristic Values

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Forward voltage	V_F	I_F=200A , V_GE=0V	T_vj=25℃	1.5	1.80	2.40	V
			T_vj=125℃		1.80
			T_vj=150℃		1.80
Reverse recovery time	trr	I_F=200A dI_F/dt=-6000A/μs (T_vj=150°C) V_R=600V, V_GE=-15V	T_vj=25℃		864		ns
			T_vj=125℃		1170
			T_vj=150℃		1280
Peak reverse recovery current	IRRM		T_vj=25℃		270		A
			T_vj=125℃		290
			T_vj=150℃		300
Reverse recovery charge	QRR		T_vj=25℃		22.6		µC
			T_vj=125℃		34.8
			T_vj=150℃		40.0
Reverse recovery energy loss per pulse	Erec		T_vj=25℃		4.0		mJ
			T_vj=125℃		13.7
			T_vj=150℃		16.1
Diode thermal resistance,junction-case	RthJCD					0.30	K /W
Operating Temperature	TJop			-40		150	℃

NTC-Thermistor

Characteristic Values

Item	Symbol	Conditions		Values	Unit
Rated resistance	R25		T_C=25℃	5.00	kΩ
B-value	R25/50			3375	K

Output characteristic(typical) Output characteristic(typical)

I_C = f (V_CE) I_C = f (V_CE) T_vj= 150°C

1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

IGBT

Transfer characteristic(typical) Switching losses IGBT (typical)

I_C = f (V_GE) V_GE = ±15V, I_C = 200A, V_CE = 600V

V_CE = 20V V_GE = ±15V, I_C = 200A, V_CE = 600V

1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

IGBT RBSOA

Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)

E = f (I_C) I_C =f (V_CE)

V_GE = ±15V, R_G = 3.3Ω , V_CE = 600V V_GE = ±15V, R_goff = 3.3Ω, T_vj = 150°C

1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

Typical capacitance as a function of collector-emitter voltage Gate charge (typical)

C = f (V_CE) V_GE = f (Q_G)

f = 100 kHz, V_GE = 0V I_C = 200A, V_CE = 600V

1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

IGBT

IGBT transient thermal impedance as a function of pulse width Forward characteristic of Diode (typical)

Zth(j-c) = f (t) I_F = f (V_F)

1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

Switching losses Diode(typical) Switching losses Diode(typical)

E_rec = f (R_G) E_rec = f (I_F)

I_F = 200A, V_CE = 600V R_G = 3.3Ω, V_CE = 600V

1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

Diode transient thermal impedance as a function of pulse width NTC-Thermistor-temperature characteristic (typical)

Zth(j-c) = f (t) R = f (T)

1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

This is a 1200V, 200A IGBT full bridge module. Full bridge configurations are commonly used in power electronic applications such as motor drives, inverters, and power supplies. The voltage rating indicates the maximum voltage the module can handle, while the current rating represents the maximum current it can handle. When using such high-power modules, proper considerations for heat sinking, cooling, and protection circuits are necessary to ensure reliable and safe operation.

Circuit diagram headline

1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

Package outlines

1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

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1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0 Images

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1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0

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1200V 200A Full Bridge IGBT Module Solid Power-DS-SPS200F12K3-S04030013 V1.0 Images