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1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

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1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

Model Number : SPS75B17G3

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Solid Power-DS-SPS75B17G3-S04010014 V1.0.

1700V 75A IGBT Half Bridge Module

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

Features:

  • 1700V Trench Gate & Field Stop Structure
  • High Short Circuit Capability
  • Low Switching Loss
  • High Reliability
  • Positive Temperature Coefficien

Typical Applications:

  • Motor Drives
  • Servo Drives
  • Inverter and Power Supplies
  • Photovoltaic

IGBT, Inverter / IGBT,逆变器

Maximum Rated Values / 最大额定值

Item

Symbol

Conditions

Value

Units

集电极－发射极电压

Collector-emitter voltage

VCES

Tvj=25°C

1700

V

连续集电极直流电流

Continuous DC collector current

IC nom

75

A

集电极重复峰值电流

Peak repetitive collector current

ICRM

tp=1ms

150

A

总功率损耗

Total power dissipation

Ptot

TC=25°C, Tvjmax=175°C

535

W

栅极－发射极峰值电压

Maximum gate-emitter voltage

VGES

±20

V

最高结温

Maximum junction temperature

Tvjmax

175

°C

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

集电极－发射极饱和电压

Collector-emitter saturation voltage

VCE(sat)

IC=75,VGE=15V

Tvj=25°C Tvj=125°C Tvj=150°C

2.24

2.51 2.56

2.60

V

V

V

栅极阈值电压

Gate threshold voltage

VGE(th)

IC=3mA, VCE=VGE, Tvj=25°C

4.5 5.9 6.5

V

栅极电荷

Gate charge

QG

VGE=-15V…+15V

0.47

uC

内部栅极电阻

Internal gate resistor

RGint

Tvj=25°C

10.8

Ω

输入电容

Input capacitance

Cies

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

5.03

nF

反向传输电容

Reverse transfer capacitance

Cres

f=1MHz, Tvj=25°C, VCE=10V, VGE=0V

0.18

nF

集电极-发射极截止电流

Collector-emitter cut-off current

ICES

VCE=1700V, VGE=0V, Tvj=25°C

3.00

mA

栅极-发射极漏电流

Gate-emitter leakage current

IGES

VCE=0V, VGE=20V, Tvj=25°C

400

nA

开通延迟时间(电感负载)

Turn-on delay time, inductive load

td( on)

IC=75A, VCE=900V

VGE=±15V

RGon=6.6Ω

RGoff=6.6Ω

Inductive Load,

Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C

174

184

188

ns

ns

ns

上升时间(电感负载)

Rise time, inductive load

tr

80

83

81

ns

ns

ns

关断延迟时间(电感负载)

Turn-off delay time, inductive load

td(off)

319

380

401

ns

ns

ns

下降时间(电感负载)

Fall time, inductive load

tf

310

562

596

ns

ns

ns

开通损耗能量(每脉冲)

Turn-on energy loss per pulse

Eon

24.7

27.6

28.4

mJ

mJ

关断损耗能量(每脉冲)

Turn-off energy loss per pulse

Eoff

10.9

16.1

17.5

mJ

mJ

短路数据

SC data

ISC

VGE≤15V, VCC=1000V

VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=150°C

240

A

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per IGBT / 每个 IGBT

0.28 K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150 °C

Diode, Inverter / 二极管,逆变器

Maximum Rated Values /最大额定值

Item

Symbol

Conditions

Value Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C

1700 V

连续正向直流电流

Continuous DC forward current

IF

75 A

正向重复峰值电流

Peak repetitive forward current

IFRM

tp=1ms

150 A

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max. Units

正向电压

Forward voltage

VF

IF=75A

Tvj=25°C

Tvj=125°C

Tvj=150°C

1.59

1.72 1.71

2.25

V

V

V

反向恢复峰值电流

Peak reverse recovery current

IRM

IF=75A

-diF/dtoff=1100A/µs

VR =900 V

VGE=-15V

Tvj=25°C

Tvj=125°C

Tvj=150°C

85

101

108

A

A

A

恢复电荷

Recovery charge

Qr

Tvj=25°C

Tvj=125°C

Tvj=150°C

23.5

32.9 36.2

uC

uC

uC

反向恢复损耗(每脉冲)

Reverse recovery energy (per pulse)

Erec

Tvj=25°C

Tvj=125°C

Tvj=150°C

11.8

17.8 19.6

mJ

mJ

mJ

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.48 K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150 °C

Module / 模块

Item

Symbol

Conditions

Value

Unit

s

绝缘测试电压

Isolation test voltage

VISOL

RMS, f=50Hz, t=1min

4.0

kV

模块基板材料

Material of module baseplate

Cu

内部绝缘

Internal isolation

基本绝缘 (class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

Al2O3

爬电距离

Creepage distance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

17

20

mm

电气间隙

Clearance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

17

9.5

mm

相对电痕指数

Comparative tracking index

CTI

>200

Item

Symbol

Conditions

Min.

Typ.

Max.

Units

杂散电感,模块

Stray inductance module

LsCE

30

nH

模块引脚电阻, 端子-芯片

Module Lead Resistance ,Terminals-Chip

RCC’+EE’

RAA’+CC’

0.65

mΩ

储存温度

Storage temperature

Tstg

-40

125

°C

模块安装的安装扭距

Mounting torque for module mounting

M

M6

3.00

5.00

Nm

端子联接扭距

Terminal connection torque

M

M5

3.00

5.00

Nm

重量

Weight

G

160

g

IGBT IGBT

Output characteristic IGBT, Inverter (typical) Output characteristic IGBT, Inverter (typical)

IC=f (VCE) IC=f(VCE)

VGE=15V Tvj=150°C

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

IGBT IGBT

Transfer characteristic IGBT, Inverter (typical) Switching losses IGBT, Inverter (typical)

IC=f(VGE) E=f(IC)

VCE=20V VGE=±15V, RG=6.6Ω, VCE=900V

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

IGBT IGBT

Switching losses IGBT, Inverter (typical) Switching losses IGBT, Inverter (typical)

E=f (RG) E=f(IC)

VGE=±15V, IC=75A, VCE=900V VGE=±15V, RG=6.6Ω, VCE=900V

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

IGBT IGBT

Switching losses IGBT, Inverter (typical) Transient thermal impedance IGBT, Inverter

E=f (RG) ZthJC=f (t)

VGE=±15V, IC=75A, VCE=900V

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

IGBT,RBSOA

Reverse bias safe operating area IGBT, Inverter (RBSOA) Forward characteristic of Diode, Inverter (typical)

IC=f (VCE) IF=f (VF)

VGE=±15V, RGoff=6.6Ω, Tvj=150°C

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

Switching losses Diode, Inverter (typical) Switching losses Diode, Inverter (typical)

Erec=f (IF) Erec=f (RG)

RG=6.6 Ω, VCE=900V IF=75A, VCE=900V

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

Transient thermal impedance Diode, Inverter

ZthJC=f (t)

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

A "1700V IGBT" is an Insulated Gate Bipolar Transistor capable of handling a maximum voltage of 1700 volts. It is used in applications that require the management of higher voltage levels, such as high-power inverters, motor drives, or power supplies. Proper cooling and gate drive circuitry are essential for optimal performance. Detailed specifications can be found in the manufacturer's datasheet.

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

Circuit diagram headline

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

Package outlines

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.


Product Tags:

75A H Bridge IGBT Module

      

1700V H Bridge IGBT Module

      

1700V IGBT Module

      
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